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| STD6NM60N - STD6NM60N-1 STF6NM60N - STP6NM60N N-channel 600V - 0.85 - 4.6A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmeshTM Power MOSFET Features Type STD6NM60N STD6NM60N-1 STF6NM60N STP6NM60N VDSS (@Tjmax) 650V 650V 650V 650V RDS(on) <0.92 <0.92 <0.92 <0.92 ID 4.6A 1 3 2 1 3 2 4.6A 4.6A (1) 4.6A TO-220 TO-220FP 1. Limited only by maximum temperature allowed 1 3 3 2 1 100% avalanche tested Low input capacitance and gate charge Low gate input resistance DPAK IPAK Description This device is realized with the second generation of MDmeshTM technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters Internal schematic diagram Application Switching applications Order codes Part number STD6NM60N-1 STD6NM60N STF6NM60N STP6NM60N Marking D6NM60N D6NM60N F6NM60N P6NM60N Package IPAK DPAK TO-220FP TO-220 Packaging Tube Tape & reel Tube Tube June 2007 Rev 2 1/17 www.st.com 17 Contents STD6NM60N - STD6NM60N-1 - STF6NM60N - STP6NM60N Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 4 5 6 Test circuit ................................................ 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 2/17 STD6NM60N - STD6NM60N-1 - STF6NM60N - STP6NM60N Electrical ratings 1 Electrical ratings Table 1. Symbol Absolute maximum ratings Value Parameter TO-220 DPAK/IPAK Unit TO-220FP V V 4.6 (1) 2.9 (1) 18.4 (1) 20 15 -2500 A A A W V/ns V VDS VGS ID ID IDM (2) PTOT dv/dt (3) VISO Tj Tstg Drain-source voltage (VGS=0) Gate-source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC = 100C Drain current (pulsed) Total dissipation at TC = 25C Peak diode recovery voltage slope Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1s;TC=25C) Operating junction temperature Storage temperature 4.6 2.9 18.4 45 600 25 -55 to 150 C 1. Limited by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD 4.6A, di/dt 400A/s, VDD = 80% V(BR)DSS Table 2. Symbol Thermal data Value Parameter TO-220 DPAK/IPAK 2.78 62.5 300 Unit TO-220FP 6.25 C/W C/W C Rthj-case Rthj-amb Tl Thermal resistance junction-case max Thermal resistance junction-amb max Maximum lead temperature for soldering purpose Table 3. Symbol IAS EAS Avalanche characteristics Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) Single pulse avalanche energy (starting Tj=25C, ID=IAS, VDD= 50V) Value 2 65 Unit A mJ 3/17 Electrical characteristics STD6NM60N - STD6NM60N-1 - STF6NM60N - STP6NM60N 2 Electrical characteristics (TCASE=25C unless otherwise specified) Table 4. Symbol V(BR)DSS dv/dt(1) On/off states Parameter Drain-source breakdown voltage Drain-source voltage slope Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 1mA, VGS= 0 VDD= 400V, VGS = 10V, ID = 4.6A VDS = Max rating, VDS = Max rating @125C VGS = 20V VDS= VGS, ID = 250A VGS= 10V, ID= 2.3A 2 3 0.85 Min 600 40 1 100 100 Typ Max Unit V V/ns A A nA V IDSS IGSS VGS(th) RDS(on) 1. 4 0.92 Characteristics value at turn off on inductive load Table 5. Symbol gfs (1) Ciss Coss Crss Coss eq. (2) Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Output equivalent capacitance Test conditions VDS =15V, ID = 2.3A Min. Typ. 4 420 30 4 Max. Unit S pF pF pF VDS =50V, f=1 MHz, VGS=0 VGS =0V, VDS =0V to 480V f=1MHz Gate DC Bias=0 test signal level=20mV open drain VDD=480V, ID = 4.6A VGS =10V (see Figure 18) 70 pF Rg Qg Qgs Qgd Gate input resistance 6 Total gate charge Gate-source charge Gate-drain charge 13 2 7 nC nC nC 1. Pulsed: pulse duration=300s, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/17 STD6NM60N - STD6NM60N-1 - STF6NM60N - STP6NM60N Electrical characteristics Table 6. Symbol td(on) tr td(off) tf Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD= 300V, ID = 2.3A, RG= 4.7, VGS = 10V (see Figure 17) Min. Typ. 10 8 40 9 Max. Unit ns ns ns ns Table 7. Symbol ISD ISDM(1) VSD(2) trr Qrr IRRM trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 4.6A, VGS=0 ISD= 4.6A, di/dt = 100A/s, VDD=20V, Tj= 25C (see Figure 19) ISD= 4.6A, di/dt = 100A/s, VDD=20V, Tj= 150C (see Figure 19) 300 2 12 Test conditions Min Typ. Max 4.6 18.4 1.3 Unit A A V ns C A Reverse recovery time Reverse recovery charge Reverse recovery current 470 3 12 ns C A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300s, duty cycle 1.5% 5/17 Electrical characteristics STD6NM60N - STD6NM60N-1 - STF6NM60N - STP6NM60N 2.1 Figure 1. Electrical characteristics (curves) Safe operating area for TO-220 Figure 2. Thermal impedance for TO-220 Figure 3. Safe operating area for TO-220FP Figure 4. Thermal impedance for TO-220FP Figure 5. Safe operating area for DPAK/IPAK Figure 6. Thermal impedance for DPAK/IPAK 6/17 STD6NM60N - STD6NM60N-1 - STF6NM60N - STP6NM60N Figure 7. Output characteristics Figure 8. Electrical characteristics Transfer characteristics Figure 9. Transconductance Figure 10. Static drain-source on resistance Figure 11. Gate charge vs gate-source voltage Figure 12. Capacitance variations 7/17 Electrical characteristics STD6NM60N - STD6NM60N-1 - STF6NM60N - STP6NM60N Figure 14. Normalized on resistance vs temperature Figure 13. Normalized gate threshold voltage vs temperature Figure 15. Source-drain diode forward characteristics Figure 16. Normalized BVDSS vs temperature 8/17 STD6NM60N - STD6NM60N-1 - STF6NM60N - STP6NM60N Test circuit 3 Test circuit Figure 18. Gate charge test circuit Figure 17. Switching times test circuit for resistive load Figure 19. Test circuit for inductive load Figure 20. Unclamped Inductive load test switching and diode recovery times circuit Figure 21. Unclamped inductive waveform Figure 22. Switching time waveform 9/17 Package mechanical data STD6NM60N - STD6NM60N-1 - STF6NM60N - STP6NM60N 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/17 STD6NM60N - STD6NM60N-1 - STF6NM60N - STP6NM60N Package mechanical data TO-220 mechanical data mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 P Q 4.40 0.61 1.14 0.49 15.25 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 Typ Max 4.60 0.88 1.70 0.70 15.75 Min 0.173 0.024 0.044 0.019 0.6 inch Typ Max 0.181 0.034 0.066 0.027 0.62 0.050 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 0.151 0.116 11/17 Package mechanical data STD6NM60N - STD6NM60N-1 - STF6NM60N - STP6NM60N TO-220FP MECHANICAL DATA mm. MIN. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 TYP MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 O A B L3 L6 L7 F1 F D G1 H F2 L2 L5 E 123 L4 12/17 G STD6NM60N - STD6NM60N-1 - STF6NM60N - STP6NM60N Package mechanical data TO-251 (IPAK) MECHANICAL DATA DIM. MIN. A A1 A3 B B2 B3 B5 B6 C C2 D E G H L L1 L2 0.45 0.48 6 6.4 4.4 15.9 9 0.8 0.8 0.3 0.95 0.6 0.6 6.2 6.6 4.6 16.3 9.4 1.2 1 0.017 0.019 0.236 0.252 0.173 0.626 0.354 0.031 0.031 2.2 0.9 0.7 0.64 5.2 mm TYP. MAX. 2.4 1.1 1.3 0.9 5.4 0.85 0.012 0.037 0.023 0.023 0.244 0.260 0.181 0.641 0.370 0.047 0.039 MIN. 0.086 0.035 0.027 0.025 0.204 inch TYP. MAX. 0.094 0.043 0.051 0.031 0.212 0.033 H C A C2 L2 D B3 B6 A1 L = = 3 B5 B A3 = B2 = G = E L1 1 2 = 0068771-E 13/17 Package mechanical data STD6NM60N - STD6NM60N-1 - STF6NM60N - STP6NM60N DPAK MECHANICAL DATA mm. DIM. MIN. A A1 A2 B b4 C C2 D D1 E E1 e e1 H L (L1) L2 L4 R V2 2.2 0.9 0.03 0.64 5.2 0.45 0.48 6 5.1 6.4 4.7 2.28 4.4 9.35 1 2.8 0.8 0.6 0.2 0 8 0 1 0.023 0.008 8 4.6 10.1 0.173 0.368 0.039 0.110 0.031 0.039 6.6 0.252 0.185 0.090 0.181 0.397 TYP MAX. 2.4 1.1 0.23 0.9 5.4 0.6 0.6 6.2 MIN. 0.086 0.035 0.001 0.025 0.204 0.017 0.019 0.236 0.200 0.260 TYP. MAX. 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 inch 0068772-F 14/17 STD6NM60N - STD6NM60N-1 - STF6NM60N - STP6NM60N Packaging mechanical data 5 Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 16.4 50 22.4 18.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0.795 0.645 0.724 1.968 0.881 BULK QTY 2500 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 B1 D D1 E F K0 P0 P1 P2 R W BASE QTY 2500 mm MIN. 6.8 10.4 1.5 1.5 1.65 7.4 2.55 3.9 7.9 1.9 40 15.7 16.3 inch MIN. MAX. 7 0.267 0.275 0.409 0.417 0.476 0.059 0.063 0.059 0.065 0.073 0.291 0.299 0.100 0.108 0.153 0.161 0.311 0.319 0.075 0.082 1.574 0.618 0.641 MAX. 10.6 12.1 1.6 1.85 7.6 2.75 4.1 8.1 2.1 15/17 Revision history STD6NM60N - STD6NM60N-1 - STF6NM60N - STP6NM60N 6 Revision history Table 8. Date 09-May-2007 01-Jun-2007 Revision history Revision 1 2 First release Corrected value on Table 7: Source drain diode Changes 16/17 STD6NM60N - STD6NM60N-1 - STF6NM60N - STP6NM60N Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 17/17 |
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